Nitride Electronic NeXt-Generation Technology (NEXT)

Archived

DARPA - Microsystems Technology Office

Description

Amendment 01: The purpose of this amendment is to revise the Proposal Due Date to 24 Feb 09. See the full conform BAA document attached (changes highlighted in yellow).Original Notice Below.DARPA is soliciting innovative research proposals in the area of advanced nitride electronics. Proposed research should investigate innovative approaches that enable revolutionary advances in nitride electronic devices and integrated circuits resulting in their ability to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Full BAA document attached.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA09-16@darpa.mil.

Who can apply

  • Unrestricted

Contact

Dr. Mark Rosker <br/>mark.rosker@darpa.mil <br/>DARPA/MTO <br/>ATTN: BAA 09-16 <br/>3701 North Fairfax Drive <br/>Arlington, VA 22203-1714 <br/>
BAA09-16@darpa.mil

Key dates & funding
  • PostedNov 19, 2008
  • ClosesNov 19, 2009
  • Award floor$0
  • Award ceiling$0
  • CFDA12.910

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